FQS4901 - параметры транзистора MOSFET, его аналоги, datasheet

FQS4901 Datasheet (PDF)

..1. Size:721K fairchild semi
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May 2000TMQFETQFETQFETQFET 400V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.45A, 400V, RDS(on) = 4.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has b

8.1. Size:1100K fairchild semi
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August 2000TMQFETQFETQFETQFETFQS4900Dual N & P-Channel, Logic Level MOSFETGeneral Description FeaturesThese dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 @ VGS = 10 Vfield effect transistors are produced using Fairchilds RDS(on) = 0.65 @ VGS = 5 Vproprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) =

8.2. Size:734K fairchild semi
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May 2000TMQFETQFETQFETQFET 500V DuaI N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.5 pF)This advanced technology has b

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