HUF76407DK_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF76407DK_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 3.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: SO8

Búsqueda de reemplazo de MOSFET HUF76407DK_F085

HUF76407DK_F085 Datasheet (PDF)

1.1. huf76407d3st.pdf Size:149K _update_mosfet

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE • Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and

1.2. huf76407dk8.pdf Size:266K _fairchild_semi

HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models 5 - Temperature Compensated PSPICE® and SABER™ Electrical Models 1 2 - SPICE and SABER Thermal Impedanc

1.3. huf76407d3 huf76407d3s.pdf Size:234K _fairchild_semi

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE � Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092?, VGS = 10V - rDS(ON) = 0.107?, VGS = 5V GATE � Simulation Models SOURCE - Temperature Compensated PSPICE� and SABER� HUF

1.4. huf76407dk f085.pdf Size:542K _fairchild_semi

HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET® Power MOSFET Features Packaging JEDEC MS-012AA • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V BRANDING DASH - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ 5 Electrical Models - SPICE and SABER Thermal Impedance

Otros transistores... FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DK_F085 , FQT1N80 , 2SK3562 , FQT3P20 , FQT4N20L , FDD14AN06L_F085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L .

Liste

Recientemente añadidas las descripciónes de los transistores: