HUF76407DKF085 MOSFET Datasheet: N-Ch, 60V, 3.5A. Full specification with pinout and replacement list

HUF76407DKF085 Specs and Replacement

Type Designator: HUF76407DKF085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SO8

HUF76407DKF085 substitution

- MOSFET ⓘ Cross-Reference Search

HUF76407DKF085 datasheet

4.1. Size:266K fairchild semi
huf76407dk8.pdf pdf_icon

HUF76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA Ultra Low On-Resistance BRANDING DASH - rDS(ON) = 0.090 , VGS = 10V - rDS(ON) = 0.105 , VGS = 5V Simulation Models 5 - Temperature Compensated PSPICE and SABER Electrical Models 1 2 - SPICE and SABER Thermal Impedanc... See More ⇒

4.2. Size:542K fairchild semi
huf76407dk f085.pdf pdf_icon

HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance - rDS(ON) = 0.090 , VGS = 10V BRANDING DASH - rDS(ON) = 0.105 , VGS = 5V Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance... See More ⇒

5.1. Size:149K fairchild semi
huf76407d3st.pdf pdf_icon

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092 , VGS = 10V - rDS(ON) = 0.107 , VGS = 5V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and... See More ⇒

5.2. Size:234K fairchild semi
huf76407d3 huf76407d3s.pdf pdf_icon