FQT3P20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT3P20
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET FQT3P20
Principales características: FQT3P20
fqt3p20.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis
fqt3p20.pdf
FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, Description ID = 0.335 A This P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC) produced using ON Semiconductor s proprietary Low Crss ( Typ. 7.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has bee
fqt3p20tf.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis
Otros transistores... FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , AO4407A , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A .
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