FQT3P20 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT3P20  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.67 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm

Encapsulados: SOT223

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FQT3P20 datasheet

 ..1. Size:650K  fairchild semi
 fqt3p20.pdf pdf_icon

FQT3P20

May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis

 ..2. Size:870K  onsemi
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FQT3P20

FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, Description ID = 0.335 A This P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC) produced using ON Semiconductor s proprietary Low Crss ( Typ. 7.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has bee

 0.1. Size:649K  fairchild semi
 fqt3p20tf.pdf pdf_icon

FQT3P20

May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis

Otros transistores... FCP25N60N, FQS4903, FQT13N06, FQT13N06L, FQT1N60C, HUF76413DKF085, FQT1N80, HUF76407DKF085, AO4407A, FQT4N20L, FDD14AN06LF085, FQT4N25, FQT5P10, FQT7N10, FDB14AN06LF085, FQT7N10L, FDP083N15A