FQT3P20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT3P20
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de FQT3P20 MOSFET
FQT3P20 Datasheet (PDF)
fqt3p20.pdf

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
fqt3p20.pdf

FQT3P20P-Channel QFET MOSFET-200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,DescriptionID = 0.335 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC)produced using ON Semiconductors proprietary Low Crss ( Typ. 7.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has bee
fqt3p20tf.pdf

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
Otros transistores... FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , AO3407 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A .
History: ATP103 | STH15N50FI
History: ATP103 | STH15N50FI



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