FQT3P20 MOSFET Datasheet: P-Ch, 200V, 0.67A. Full specification with pinout and replacement list

FQT3P20 Specs and Replacement

Type Designator: FQT3P20

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.67 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: SOT223

FQT3P20 substitution

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FQT3P20 datasheet

..1. Size:650K fairchild semi
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May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis... See More ⇒

..2. Size:870K onsemi
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FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, Description ID = 0.335 A This P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC) produced using ON Semiconductor s proprietary Low Crss ( Typ. 7.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has bee... See More ⇒

0.1. Size:649K fairchild semi
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