FQT3P20 Datasheet and Replacement
Type Designator: FQT3P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.67 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: SOT223
FQT3P20 substitution
FQT3P20 Datasheet (PDF)
fqt3p20.pdf
May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
fqt3p20.pdf
FQT3P20P-Channel QFET MOSFET-200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,DescriptionID = 0.335 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC)produced using ON Semiconductors proprietary Low Crss ( Typ. 7.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has bee
fqt3p20tf.pdf
May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
Datasheet: FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , BS170 , FQT4N20L , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A .
History: FQT1N60C | LND4N60 | HAT2040R | HAT2037T | CSN03N2P2 | IRF620 | CSD75207W15
Keywords - FQT3P20 MOSFET datasheet
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History: FQT1N60C | LND4N60 | HAT2040R | HAT2037T | CSN03N2P2 | IRF620 | CSD75207W15
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