FQT3P20 Datasheet and Replacement
Type Designator: FQT3P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.67 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: SOT223
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FQT3P20 Datasheet (PDF)
fqt3p20.pdf

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
fqt3p20.pdf

FQT3P20P-Channel QFET MOSFET-200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,DescriptionID = 0.335 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC)produced using ON Semiconductors proprietary Low Crss ( Typ. 7.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has bee
fqt3p20tf.pdf

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
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History: VBNC1303 | IRFS4010PBF



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