Справочник MOSFET. FQT3P20

 

FQT3P20 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQT3P20
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.67 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

FQT3P20 Datasheet (PDF)

 ..1. Size:650K  fairchild semi
 fqt3p20.pdf pdf_icon

FQT3P20

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis

 ..2. Size:870K  onsemi
 fqt3p20.pdf pdf_icon

FQT3P20

FQT3P20P-Channel QFET MOSFET-200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,DescriptionID = 0.335 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC)produced using ON Semiconductors proprietary Low Crss ( Typ. 7.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has bee

 0.1. Size:649K  fairchild semi
 fqt3p20tf.pdf pdf_icon

FQT3P20

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis

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History: APT5020SVFR | CRSS035N10N | SIR800DP | STW20NM60FD | RU7590R | TPC8401 | 2SK2882

 

 
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