FQT4N20L Todos los transistores

 

FQT4N20L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQT4N20L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

FQT4N20L Datasheet (PDF)

 ..1. Size:627K  fairchild semi
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FQT4N20L

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 ..2. Size:831K  onsemi
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FQT4N20L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:625K  fairchild semi
 fqt4n20ltf.pdf pdf_icon

FQT4N20L

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 7.1. Size:627K  fairchild semi
 fqt4n20tf.pdf pdf_icon

FQT4N20L

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored

MOSTRAR MÁS

Otros transistores... FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , AO3407 , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C .

History: IRFP9130 | IRFP333 | IRFP243 | IRFP253 | IRFP453 | IRFP452 | IRFP244

 

 
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