FQT4N20L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT4N20L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET FQT4N20L
Principales características: FQT4N20L
fqt4n20l.pdf
May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t
fqt4n20l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqt4n20ltf.pdf
May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t
fqt4n20tf.pdf
May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored
Otros transistores... FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , 60N06 , FDD14AN06LF085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q
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