All MOSFET. FQT4N20L Datasheet

 

FQT4N20L MOSFET. Datasheet pdf. Equivalent

Type Designator: FQT4N20L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.2 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.85 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.35 Ohm

Package: SOT223

FQT4N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT4N20L Datasheet (PDF)

1.1. fqt4n20l.pdf Size:627K _fairchild_semi

FQT4N20L
FQT4N20L

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.85A, 200V, RDS(on) = 1.35? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to •

4.1. fqt4n25.pdf Size:653K _fairchild_semi

FQT4N20L
FQT4N20L

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.83A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored to • Fast s

 

Datasheet: FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DK_F085 , FQT1N80 , HUF76407DK_F085 , FQT3P20 , IRFP4229 , FDD14AN06L_F085 , FQT4N25 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C .

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