Справочник MOSFET. FQT4N20L

 

FQT4N20L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQT4N20L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.85 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

FQT4N20L Datasheet (PDF)

 ..1. Size:627K  fairchild semi
 fqt4n20l.pdf pdf_icon

FQT4N20L

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 ..2. Size:831K  onsemi
 fqt4n20l.pdf pdf_icon

FQT4N20L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:625K  fairchild semi
 fqt4n20ltf.pdf pdf_icon

FQT4N20L

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 7.1. Size:627K  fairchild semi
 fqt4n20tf.pdf pdf_icon

FQT4N20L

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored

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History: PA502FMG | SFS06R03PF | NDT6N70 | BRD50P06 | SM4372NSKP | IPD50R280CE | HGB110N10SL

 

 
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