DHS020N04D Todos los transistores

 

DHS020N04D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS020N04D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 74.3 nC
   trⓘ - Tiempo de subida: 95.6 nS
   Cossⓘ - Capacitancia de salida: 2180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

DHS020N04D Datasheet (PDF)

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 dhs020n04b dhs020n04d.pdf pdf_icon

DHS020N04D

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo

 5.1. Size:879K  cn wxdh
 dhs020n04p.pdf pdf_icon

DHS020N04D

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast

 5.2. Size:999K  cn wxdh
 dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf pdf_icon

DHS020N04D

DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo

 7.1. Size:977K  cn wxdh
 dhs020n88 dhs020n88e dhs020n88i.pdf pdf_icon

DHS020N04D

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DHS022N06E | BUK555-200B

 

 
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