DHS020N04D Datasheet. Specs and Replacement

Type Designator: DHS020N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95.6 nS

Cossⓘ - Output Capacitance: 2180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO252

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DHS020N04D datasheet

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DHS020N04D

DHS020N04B/DHS020N04D 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Low on resistance Lo... See More ⇒

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DHS020N04D

DHS020N04P 170A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.3m DS(on) (TYP) the RoHS standard. 1 3 S I = 170A D 2 Features Low on resistance Low gate charge Fast... See More ⇒

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DHS020N04D

DHS020N04/DHS020N04F/ DHS020N04I/DHS020N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with G R = 1.7m DS(on) (TYP) 1 the RoHS standard. 3 S I = 180A D 2 Features Fast switching Lo... See More ⇒

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DHS020N04D

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Detailed specifications: DHE9Z24, DHESJ11N65, DHESJ13N65, DHESJ17N65, DHEZ24B31, DHF035N04, DHF100N03B13, DHF10H035R, IRF1405, DHS020N04E, DHS020N04F, DHS020N04I, DHS020N04P, DHS020N88, DHS020N88E, DHS020N88I, DHS020N88U

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