Справочник MOSFET. DHS020N04D

 

DHS020N04D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS020N04D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 95.6 ns
   Cossⓘ - Выходная емкость: 2180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для DHS020N04D

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS020N04D Datasheet (PDF)

 ..1. Size:810K  cn wxdh
 dhs020n04b dhs020n04d.pdf pdf_icon

DHS020N04D

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo

 5.1. Size:879K  cn wxdh
 dhs020n04p.pdf pdf_icon

DHS020N04D

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast

 5.2. Size:999K  cn wxdh
 dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf pdf_icon

DHS020N04D

DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo

 7.1. Size:977K  cn wxdh
 dhs020n88 dhs020n88e dhs020n88i.pdf pdf_icon

DHS020N04D

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHE9Z24 , DHESJ11N65 , DHESJ13N65 , DHESJ17N65 , DHEZ24B31 , DHF035N04 , DHF100N03B13 , DHF10H035R , 2N60 , DHS020N04E , DHS020N04F , DHS020N04I , DHS020N04P , DHS020N88 , DHS020N88E , DHS020N88I , DHS020N88U .

History: AP70SL380AI | GP1M018A020XX | LSD60R1K4HT | HTS210C03 | SQS400EN | AO4718 | IPD50N10S3L-16

 

 
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