FQT4N25 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT4N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.83 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de FQT4N25 MOSFET
FQT4N25 PDF Specs
fqt4n25.pdf
May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored... See More ⇒
fqt4n25tf.pdf
May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored... See More ⇒
fqt4n20tf.pdf
May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored ... See More ⇒
fqt4n20ltf.pdf
May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t... See More ⇒
Otros transistores... FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , AO4468 , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 .
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