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FQT4N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT4N25

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 0.83 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.75 Ohm

Empaquetado / Estuche: SOT223

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FQT4N25 Datasheet (PDF)

1.1. fqt4n25.pdf Size:653K _fairchild_semi

FQT4N25
FQT4N25

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored to Fast s

1.2. fqt4n25tf.pdf Size:652K _fairchild_semi

FQT4N25
FQT4N25

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.83A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored

 4.1. fqt4n20l.pdf Size:627K _fairchild_semi

FQT4N25
FQT4N25

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to

4.2. fqt4n20tf.pdf Size:627K _fairchild_semi

FQT4N25
FQT4N25

May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored

 4.3. fqt4n20ltf.pdf Size:625K _fairchild_semi

FQT4N25
FQT4N25

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.85A, 200V, RDS(on) = 1.35Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially t

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