FQT4N25 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT4N25  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.83 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm

Encapsulados: SOT223

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FQT4N25 datasheet

 ..1. Size:653K  fairchild semi
fqt4n25.pdf pdf_icon

FQT4N25

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored

 0.1. Size:652K  fairchild semi
fqt4n25tf.pdf pdf_icon

FQT4N25

May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored

 8.1. Size:627K  fairchild semi
fqt4n20tf.pdf pdf_icon

FQT4N25

May 2001 TM QFET FQT4N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored

 8.2. Size:625K  fairchild semi
fqt4n20ltf.pdf pdf_icon

FQT4N25

May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially t

Otros transistores... FQT13N06L, FQT1N60C, HUF76413DKF085, FQT1N80, HUF76407DKF085, FQT3P20, FQT4N20L, FDD14AN06LF085, AO4468, FQT5P10, FQT7N10, FDB14AN06LF085, FQT7N10L, FDP083N15A, FQU10N20C, FDP075N15A, FQU11P06