All MOSFET. FQT4N25 Datasheet

 

FQT4N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQT4N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.83 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: SOT223

 FQT4N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQT4N25 Datasheet (PDF)

 ..1. Size:653K  fairchild semi
 fqt4n25.pdf

FQT4N25 FQT4N25

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored

 0.1. Size:652K  fairchild semi
 fqt4n25tf.pdf

FQT4N25 FQT4N25

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored

 8.1. Size:627K  fairchild semi
 fqt4n20tf.pdf

FQT4N25 FQT4N25

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored

 8.2. Size:625K  fairchild semi
 fqt4n20ltf.pdf

FQT4N25 FQT4N25

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 8.3. Size:627K  fairchild semi
 fqt4n20l.pdf

FQT4N25 FQT4N25

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t

 8.4. Size:831K  onsemi
 fqt4n20l.pdf

FQT4N25 FQT4N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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