FQT4N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQT4N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 0.83 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1.75 Ohm
Package: SOT223
FQT4N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQT4N25 Datasheet (PDF)
1.1. fqt4n25.pdf 
Size:653K _fairchild_semi
May 2001 TM QFET FQT4N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.83A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been especially tailored to • Fast s
4.1. fqt4n20l.pdf Size:627K _fairchild_semi
May 2001 TM QFET FQT4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.85A, 200V, RDS(on) = 1.35? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to •
Datasheet: FQT13N06L , FQT1N60C , HUF76413DK_F085 , FQT1N80 , HUF76407DK_F085 , FQT3P20 , FQT4N20L , FDD14AN06L_F085 , 2SK2837 , FQT5P10 , FQT7N10 , FDB14AN06L_F085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 .
