FQT4N25 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQT4N25
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.83 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm
Тип корпуса: SOT223
Аналог (замена) для FQT4N25
FQT4N25 Datasheet (PDF)
fqt4n25.pdf

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored
fqt4n25tf.pdf

May 2001TMQFETFQT4N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.83A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology has been especially tailored
fqt4n20tf.pdf

May 2001TMQFETFQT4N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especially tailored
fqt4n20ltf.pdf

May 2001TMQFETFQT4N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.85A, 200V, RDS(on) = 1.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially t
Другие MOSFET... FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 , HUF76407DKF085 , FQT3P20 , FQT4N20L , FDD14AN06LF085 , IRFP064N , FQT5P10 , FQT7N10 , FDB14AN06LF085 , FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 .
History: SIHU5N50D | AOTF5N50 | IPU60R2K0C6
History: SIHU5N50D | AOTF5N50 | IPU60R2K0C6



Список транзисторов
Обновления
MOSFET: JMSH0606PU | JMSH0606PK | JMSH0606PGQ | JMSH0606PGDQ | JMSH0606PGD | JMSH0606PG | JMSH0606PC | JMSH0606AU | JMSH0606AKQ | JMSH0606AK | JMSH0606AGQ | JMSH0606AG | JMSH0605AGDQ | JMSH0605AGD | JBL101N | JBL083M
Popular searches
toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent