DH060N08I Todos los transistores

 

DH060N08I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH060N08I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 120 nC
   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TO262
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DH060N08I Datasheet (PDF)

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 dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf pdf_icon

DH060N08I

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist

 7.1. Size:1032K  cn wxdh
 dh060n07b dh060n07d.pdf pdf_icon

DH060N08I

DH060N07B/DH060N07D100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast sw

 7.2. Size:693K  cn wxdh
 dh060n03r.pdf pdf_icon

DH060N08I

DH060N03R54A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 5.3mDS(on) (TYP)G12 Features I = 54A3 S D Low switching loss Low on resistance Low gate charge Low revers

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