DH060N08I Datasheet and Replacement
Type Designator: DH060N08I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 81 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO262
DH060N08I substitution
DH060N08I Datasheet (PDF)
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist
dh060n07b dh060n07d.pdf

DH060N07B/DH060N07D100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast sw
dh060n03r.pdf

DH060N03R54A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 5.3mDS(on) (TYP)G12 Features I = 54A3 S D Low switching loss Low on resistance Low gate charge Low revers
Datasheet: DHFSJ13N65 , DHFSJ17N65 , DHFSJ5N65 , DH060N08 , DH060N08B , DH060N08D , DH060N08E , DH060N08F , IRF9540 , DH065N04 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , DH065N04P , DH065N06 .
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