DH060N08I Datasheet and Replacement
Type Designator: DH060N08I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 81 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO262
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DH060N08I Datasheet (PDF)
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf

DH060N08/DH060N08F/DH060N08IDH060N08E/DH060N08B/DH060N08D81A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 81AD2 Features Low on resist
dh060n07b dh060n07d.pdf

DH060N07B/DH060N07D100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 5.7mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast sw
dh060n03r.pdf

DH060N03R54A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets used advanced2 DV = 30VDSStrench technology design, provided excellent Rdson andlow gate charge. Which accords with the RoHS standard.R = 5.3mDS(on) (TYP)G12 Features I = 54A3 S D Low switching loss Low on resistance Low gate charge Low revers
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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