FQU1N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQU1N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 4.8 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm
   Paquete / Cubierta: TO251 IPAK

Búsqueda de reemplazo de MOSFET FQU1N60C

FQU1N60C Datasheet (PDF)

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fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf

January 2009QFETFQD1N60C / FQU1N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC)planar stripe, DMOS technology. Low Crss ( typical 3.5 pF)This advanced technology has been especiall

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fqd1n60c fqu1n60c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqd1n60tf fqd1n60tm fqu1n60tu.pdf

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

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fqd1n60 fqu1n60.pdf

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fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf

January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially

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fqd1n50tf fqd1n50tm fqu1n50tu.pdf

January 2009QFETFQD1N50 / FQU1N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especia

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fqu1n80.pdf

January 2014FQD1N80 / FQU1N80N-Channel QFET MOSFET800 V, 1.0 A, 20 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 20 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 0.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC)technology has been espe

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Otros transistores... FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , 10N60 , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS .

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