All MOSFET. FQU1N60C Datasheet

 

FQU1N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU1N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 11.5 Ohm

Package: TO251_IPAK

FQU1N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU1N60C Datasheet (PDF)

1.1. fqd1n60c fqu1n60c.pdf Size:752K _fairchild_semi

FQU1N60C
FQU1N60C

January 2009 QFET® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8nC) planar stripe, DMOS technology. • Low Crss ( typical 3.5 pF) This advanced technology has been especially tailored to

3.1. fqd1n60 fqu1n60.pdf Size:543K _fairchild_semi

FQU1N60C
FQU1N60C

April 2000 TM QFET QFET QFET QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 600V, RDS(on) = 11.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 3.0 pF) This advanced technology has been esp

 5.1. fqu1n80.pdf Size:1270K _fairchild_semi

FQU1N60C
FQU1N60C

January 2014 FQD1N80 / FQU1N80 N-Channel QFET® MOSFET 800 V, 1.0 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.0 A, 800 V, RDS(on) = 2̀0 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 5.5 nC) technology has been espe

5.2. fqd1n80 fqu1n80.pdf Size:731K _fairchild_semi

FQU1N60C
FQU1N60C

January 2009 QFET® FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.0A, 800V, RDS(on) = 20? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.5nC) planar stripe, DMOS technology. • Low Crss ( typical 2.7pF) This advanced technology has been especially tailored to •

Datasheet: FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , IRF530 , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C , FQU4N50TU_WS .

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