FQU1N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQU1N60C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.8 nC
Сопротивление сток-исток открытого транзистора (Rds): 11.5 Ohm
Тип корпуса: TO251 IPAK
FQU1N60C Datasheet (PDF)
fqd1n60ctf fqd1n60ctm fqd1n60c fqu1n60c fqu1n60ctu.pdf
January 2009QFETFQD1N60C / FQU1N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8nC)planar stripe, DMOS technology. Low Crss ( typical 3.5 pF)This advanced technology has been especiall
fqd1n60c fqu1n60c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqd1n60tf fqd1n60tm fqu1n60tu.pdf
April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology
fqd1n60 fqu1n60.pdf
April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology
fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf
January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially
fqd1n50tf fqd1n50tm fqu1n50tu.pdf
January 2009QFETFQD1N50 / FQU1N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especia
fqu1n80.pdf
January 2014FQD1N80 / FQU1N80N-Channel QFET MOSFET800 V, 1.0 A, 20 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 20 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 0.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC)technology has been espe
fqd1n80 fqu1n80.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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