ED120N10ZR Todos los transistores

 

ED120N10ZR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ED120N10ZR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 117 nC
   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 1026 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263
 

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ED120N10ZR Datasheet (PDF)

 ..1. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf pdf_icon

ED120N10ZR

D120N10ZR/FD120N10ZR/ID120N10ZR/ED120N10ZR120A100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Split Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.3m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Low On Resistance Low

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

ED120N10ZR

NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

 9.2. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

ED120N10ZR

NCE50ED120VT1200V 50A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 9.3. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

ED120N10ZR

NCE75ED120VTP1200V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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