ED120N10ZR Datasheet PDF and Equivalents Search

 ..1. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low... See More ⇒

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒

 9.2. Size:1161K  ncepower
 nce50ed120vt.pdf

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 9.3. Size:1233K  ncepower
 nce75ed120vtp.pdf

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.4. Size:1131K  ncepower
 nce75ed120vt4.pdf

NCE75ED120VT4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.5. Size:1219K  ncepower
 nce75ed120vt.pdf

NCE75ED120VT 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 9.6. Size:1203K  ncepower
 nce40ed120vtp.pdf

NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.7. Size:1602K  ncepower
 nce160ed120vtp.pdf

NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160... See More ⇒

 9.8. Size:1355K  ncepower
 nce120ed120vtp4.pdf

NCE120ED120VTP4 1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.60... See More ⇒

 9.9. Size:1189K  ncepower
 nce40ed120vt.pdf

NCE40ED120VT 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 9.10. Size:1144K  ncepower
 nce75ed120vtp4.pdf

NCE75ED120VTP4 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC... See More ⇒

 9.11. Size:1175K  ncepower
 nce50ed120vtp.pdf

NCE50ED120VTP 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

 9.12. Size:1440K  ncepower
 nce120ed120vtp.pdf

NCE120ED120VTP 1200V, 120A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.60V... See More ⇒