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ED120N10ZR Spec and Replacement


   Type Designator: ED120N10ZR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 1026 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263

 ED120N10ZR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ED120N10ZR Specs

 ..1. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf pdf_icon

ED120N10ZR

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low... See More ⇒

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

ED120N10ZR

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒

 9.2. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

ED120N10ZR

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =... See More ⇒

 9.3. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

ED120N10ZR

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒

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Detailed specifications: E13N50 , E20N50 , E25N10 , E50N06 , E630 , E640 , E740 , E80N06 , AO3401 , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 , F110N04 , DHZ24B31 , DJC070N60F .

History: DJD420N70T | DJD380N65T

Keywords - ED120N10ZR MOSFET specs

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