ED120N10ZR - аналоги и даташиты транзистора

 

ED120N10ZR - Даташиты. Аналоги. Основные параметры


   Наименование производителя: ED120N10ZR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 1026 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO263

 Аналог (замена) для ED120N10ZR

 

ED120N10ZR Datasheet (PDF)

 ..1. Size:1084K  cn wxdh
 d120n10zr fd120n10zr id120n10zr ed120n10zr.pdf pdf_icon

ED120N10ZR

D120N10ZR/FD120N10ZR /ID120N10ZR/ED120N10ZR 120A100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Split Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.3m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Low On Resistance Low

 9.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

ED120N10ZR

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16

 9.2. Size:1161K  ncepower
 nce50ed120vt.pdf pdf_icon

ED120N10ZR

NCE50ED120VT 1200V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC =

 9.3. Size:1233K  ncepower
 nce75ed120vtp.pdf pdf_icon

ED120N10ZR

NCE75ED120VTP 1200V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... E13N50 , E20N50 , E25N10 , E50N06 , E630 , E640 , E740 , E80N06 , AO3401 , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 , F110N04 , DHZ24B31 , DJC070N60F .

History: TK8Q60W | DJC070N65M2 | SL65N10Q

 

 
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