F10N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

F10N7010A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 10.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF10N70CN- MOS / N-CHANNEL POWER MOSFET SIF10N70C

SLP10N70C/SLF10N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 700V, RDS(on) typ. = 0.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De