F10N70 datasheet, подбор замены

 ..1. Size:1297K  cn wxdh
 f10n70.pdf 

F10N70 10A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)

 0.1. Size:291K  sisemi
 sif10n70c.pdf 

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF10N70C N- MOS / N-CHANNEL POWER MOSFET SIF10N70C

 0.2. Size:1390K  maple semi
 slp10n70c slf10n70c.pdf 

SLP10N70C/SLF10N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 700V, RDS(on) typ. = 0.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

 0.3. Size:905K  samwin
 swf10n70k swd10n70k.pdf 

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D

 0.4. Size:946K  samwin
 sw10n70k swf10n70k swd10n70k.pdf 

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De