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F10N70 Spec and Replacement


   Type Designator: F10N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F

 F10N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

F10N70 Specs

 ..1. Size:1297K  cn wxdh
 f10n70.pdf pdf_icon

F10N70

F10N70 10A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) ... See More ⇒

 0.1. Size:291K  sisemi
 sif10n70c.pdf pdf_icon

F10N70

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF10N70C N- MOS / N-CHANNEL POWER MOSFET SIF10N70C ... See More ⇒

 0.2. Size:1390K  maple semi
 slp10n70c slf10n70c.pdf pdf_icon

F10N70

SLP10N70C/SLF10N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 700V, RDS(on) typ. = 0.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

 0.3. Size:905K  samwin
 swf10n70k swd10n70k.pdf pdf_icon

F10N70

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D... See More ⇒

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Detailed specifications: E630 , E640 , E740 , E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , SPP20N60C3 , F10N80 , F110N04 , DHZ24B31 , DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T .

History: F12N60 | F14N65

Keywords - F10N70 MOSFET specs

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