DHS110N15 Todos los transistores

DHS110N15/DHS110N15E 90A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET utilizes V = 150V DSS 2 D advanced Split Gate Trench technology, which provides R = 9.7m 220 DS(on) (Type) excellent Rdson and low Gate charge at the same time. G R = 9.4m 263 DS(on) (Type) Which accords with the RoHS standard. 1 I = 90A

DHS110N15D 85A 150V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets. used 2 D V = 150V DSS advanced trench process technology design, provided excellent Rdson and low gate charge. Which accords with the R = 13m DS(on) (Type) G RoHS standard. 1 I = 85A 3 S D 2 Features Low on resistance Low gate charge High ava

DHS110N15F 150V/9.5m /52A N-MOSFET Features Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pF Qgd 5nC Applications Power switching applications DC-DC converters Full bridge