DHS110N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHS110N15
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.3 nS
Cossⓘ - Capacitancia de salida: 241 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de DHS110N15 MOSFET
DHS110N15 Datasheet (PDF)
dhs110n15 dhs110n15e.pdf

DHS110N15/DHS110N15E90A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET utilizesV = 150VDSS2 Dadvanced Split Gate Trench technology, which providesR = 9.7m220DS(on) (Type)excellent Rdson and low Gate charge at the same time.G R = 9.4m263DS(on) (Type)Which accords with the RoHS standard.1I = 90A
dhs110n15d.pdf

DHS110N15D85A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 13mDS(on) (Type)GRoHS standard.1I = 85A3 S D2 Features Low on resistance Low gate charge High ava
dhs110n15f.pdf

DHS110N15F150V/9.5m/52A N-MOSFETFeatures Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pFQgd 5nCApplications Power switching applications DC-DC converters Full bridge
Otros transistores... DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , 10N65 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L .



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