DHS110N15 Datasheet and Replacement
Type Designator: DHS110N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 43 nC
tr ⓘ - Rise Time: 8.3 nS
Cossⓘ - Output Capacitance: 241 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO220
DHS110N15 substitution
DHS110N15 Datasheet (PDF)
dhs110n15 dhs110n15e.pdf

DHS110N15/DHS110N15E90A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET utilizesV = 150VDSS2 Dadvanced Split Gate Trench technology, which providesR = 9.7m220DS(on) (Type)excellent Rdson and low Gate charge at the same time.G R = 9.4m263DS(on) (Type)Which accords with the RoHS standard.1I = 90A
dhs110n15d.pdf

DHS110N15D85A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 13mDS(on) (Type)GRoHS standard.1I = 85A3 S D2 Features Low on resistance Low gate charge High ava
dhs110n15f.pdf

DHS110N15F150V/9.5m/52A N-MOSFETFeatures Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pFQgd 5nCApplications Power switching applications DC-DC converters Full bridge
Datasheet: DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , 10N65 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L .
Keywords - DHS110N15 MOSFET datasheet
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