DHS110N15 - параметры транзистора MOSFET, его аналоги, datasheet

DHS110N15 Datasheet (PDF)

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DHS110N15/DHS110N15E90A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET utilizesV = 150VDSS2 Dadvanced Split Gate Trench technology, which providesR = 9.7m220DS(on) (Type)excellent Rdson and low Gate charge at the same time.G R = 9.4m263DS(on) (Type)Which accords with the RoHS standard.1I = 90A

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DHS110N15D85A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets. used2 DV = 150VDSSadvanced trench process technology design, providedexcellent Rdson and low gate charge. Which accords with theR = 13mDS(on) (Type)GRoHS standard.1I = 85A3 S D2 Features Low on resistance Low gate charge High ava

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DHS110N15F150V/9.5m/52A N-MOSFETFeatures Key Parameters Low on resistance VDS 150V Low reverse transfer capacitances RDS(on)typ. 9.5m 100% single pulse avalanche energy test ID 52A 100% VDS test VTH 3V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 3863pFQgd 5nCApplications Power switching applications DC-DC converters Full bridge

Другие MOSFET... DSB190N10L3 , DSD040N08N3A , DSD065N04LA , DSD065N10L3A , DSD090N10L3A , DSD150N10L3 , DSD190N10L3 , DSD270N12N3 , 10N65 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L .