DHS042N15 Todos los transistores

 

DHS042N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS042N15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 124 nC
   trⓘ - Tiempo de subida: 106 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
   Paquete / Cubierta: TO220
 

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DHS042N15 Datasheet (PDF)

 ..1. Size:964K  cn wxdh
 dhs042n15 dhs042n15e.pdf pdf_icon

DHS042N15

DHS042N15&DHS042N15E150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 150VDSSutilizes advanced Split Gate Trench technology, which2 Dprovides excellent Rdson and low Gate charge at the sameR = 5.0mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1 R = 4.8mTO-263DS(on) (TYP)3 S

 7.1. Size:792K  cn wxdh
 dhs042n85p.pdf pdf_icon

DHS042N15

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS042N15

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS042N15

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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