All MOSFET. DHS042N15 Datasheet

 

DHS042N15 Datasheet and Replacement


   Type Designator: DHS042N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO220
 

 DHS042N15 substitution

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DHS042N15 Datasheet (PDF)

 ..1. Size:964K  cn wxdh
 dhs042n15 dhs042n15e.pdf pdf_icon

DHS042N15

DHS042N15&DHS042N15E150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 150VDSSutilizes advanced Split Gate Trench technology, which2 Dprovides excellent Rdson and low Gate charge at the sameR = 5.0mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1 R = 4.8mTO-263DS(on) (TYP)3 S

 7.1. Size:792K  cn wxdh
 dhs042n85p.pdf pdf_icon

DHS042N15

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS042N15

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS042N15

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

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Datasheet: F13N50 , F14N65 , F16N65 , F18N50 , F18N65 , F20N50 , F20N60 , F25N10 , 2SK3918 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , DHS044N12 , DHS044N12E , DHS044N12U , DHS045N85 .

History: IPB049N06L3G

Keywords - DHS042N15 MOSFET datasheet

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 DHS042N15 equivalent finder
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