2SK3177 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3177
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO220FM

Búsqueda de reemplazo de MOSFET 2SK3177

2SK3177 Datasheet (PDF)

..1. Size:88K renesas
2sk3177.pdf

2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous: ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

..2. Size:279K inchange semiconductor
2sk3177.pdf

isc N-Channel MOSFET Transistor 2SK3177FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =115m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:102K renesas
rej03g1089 2sk3177ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:186K toshiba
2sk3176.pdf

2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5

8.2. Size:284K inchange semiconductor
2sk3176.pdf

isc N-Channel MOSFET Transistor 2SK3176FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... 2SK3156 , 2SK3157 , 2SK3158 , 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , IRF740 , 2SK3203 , 2SK3209 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 .

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