2SK3177 Todos los transistores

 ..1. Size:88K  renesas
 2sk3177.pdf

2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

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 2sk3177.pdf

isc N-Channel MOSFET Transistor 2SK3177 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =115m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

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 rej03g1089 2sk3177ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 2sk3176.pdf

2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode Vth = 1.5 to 3.5

 8.2. Size:284K  inchange semiconductor
 2sk3176.pdf

isc N-Channel MOSFET Transistor 2SK3176 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d