2SK3177. Аналоги и основные параметры
Наименование производителя: 2SK3177
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 120 ns
Cossⓘ - Выходная емкость: 510 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
Тип корпуса: TO220FM
Аналог (замена) для 2SK3177
- подборⓘ MOSFET транзистора по параметрам
2SK3177 даташит
2sk3177.pdf
2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3
2sk3177.pdf
isc N-Channel MOSFET Transistor 2SK3177 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =115m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
rej03g1089 2sk3177ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3176.pdf
2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode Vth = 1.5 to 3.5
Другие IGBT... 2SK3156, 2SK3157, 2SK3158, 2SK3159, 2SK3160, 2SK3161, 2SK3162, 2SK3163, IRF740, 2SK3203, 2SK3209, 2SK3210, 2SK3211, 2SK3212, 2SK3214, 2SK3228, 2SK3229
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