All MOSFET. 2SK3177 Datasheet


2SK3177 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3177

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 120 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm

Package: TO220FM

2SK3177 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2SK3177 Datasheet (PDF)

0.1. 2sk3177.pdf Size:88K _renesas


2SK3177 Silicon N Channel MOS FET High Speed Power Switching REJ03G1089-0300 (Previous: ADE-208-745A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

0.2. rej03g1089 2sk3177ds.pdf Size:102K _renesas


To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. 2sk3176.pdf Size:186K _toshiba


2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5

Datasheet: 2SK3156 , 2SK3157 , 2SK3158 , 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , IRF740 , 2SK3203 , 2SK3209 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 .


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