DHS065N10P Todos los transistores

 

DHS065N10P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS065N10P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 138 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60.5 nS
   Cossⓘ - Capacitancia de salida: 374 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: DFN5X6-8L

 Búsqueda de reemplazo de MOSFET DHS065N10P

 

Principales características: DHS065N10P

 ..1. Size:672K  cn wxdh
 dhs065n10p.pdf pdf_icon

DHS065N10P

DHS065N10P 80A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low g

 5.1. Size:784K  cn wxdh
 dhs065n10.pdf pdf_icon

DHS065N10P

DHS065N10 95A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 7.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 95A D 2 Features Fast switching Low on resistance Low ga

 7.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N10P

DHS065N85P 80A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low gate

 7.2. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10P

DHS065N85/DHS065N85F/DHS065N85I DHS065N85E/DHS065N85B/DHS065N85D 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features

MOSTRAR MÁS

Otros transistores... DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , IRF3205 , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 .

 

 
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