All MOSFET. DHS065N10P Datasheet

 

DHS065N10P Datasheet and Replacement


   Type Designator: DHS065N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 374 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: DFN5X6-8L
 

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DHS065N10P Datasheet (PDF)

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 dhs065n10p.pdf pdf_icon

DHS065N10P

DHS065N10P80A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low g

 5.1. Size:784K  cn wxdh
 dhs065n10.pdf pdf_icon

DHS065N10P

DHS065N1095A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 7.4mDS(on) (TYP)the RoHS standard.13 SI = 95AD2 Features Fast switching Low on resistance Low ga

 7.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N10P

DHS065N85P80A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.8mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low gate

 7.2. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10P

DHS065N85/DHS065N85F/DHS065N85IDHS065N85E/DHS065N85B/DHS065N85D100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features

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Datasheet: DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , IRF3205 , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 .

Keywords - DHS065N10P MOSFET datasheet

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