DHS065N10P - аналоги и даташиты транзистора

 

DHS065N10P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: DHS065N10P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 138 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60.5 ns
   Cossⓘ - Выходная емкость: 374 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для DHS065N10P

 

DHS065N10P Datasheet (PDF)

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 dhs065n10p.pdf pdf_icon

DHS065N10P

DHS065N10P 80A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low g

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 dhs065n10.pdf pdf_icon

DHS065N10P

DHS065N10 95A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 7.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 95A D 2 Features Fast switching Low on resistance Low ga

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 dhs065n85p.pdf pdf_icon

DHS065N10P

DHS065N85P 80A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 80A D 2 Features Fast switching Low on resistance Low gate

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 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N10P

DHS065N85/DHS065N85F/DHS065N85I DHS065N85E/DHS065N85B/DHS065N85D 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 6.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , IRF3205 , DHS065N85 , DHS065N85B , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 .

 

 
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