DHSJ21N65Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHSJ21N65Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 66 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: PDFN4-8X8

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DHSJ21N65Z datasheet

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DHSJ21N65Z

DHSJ21N65Z 16A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS R = 150m DS(on) (TYP) standard. I = 16 A D 2 Features Low on resistance Low gate charge Fast switching Low re

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DHSJ21N65Z

DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP) G the RoHS standard. 1 I = 21A 3 S D 2 Features Fast switching Low on resistance

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 dhsj25n65f.pdf pdf_icon

DHSJ21N65Z

DHSJ25N65F 25A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 110m DS(on) (TYP) RoHS standard. I = 25A D 2 Features Fast switching Low on resistance Low gate charge Low reve

Otros transistores... DHS065N85E, DHS065N85F, DHS065N85I, DHS065N85P, DHSJ11N65, DHSJ13N65, DHSJ17N65, DHSJ21N65W, IRFB4110, DHSJ25N65F, DSE012N04NA, DSE022N10N3, F4N60, F4N65, F4N70, F50N06, F50N20