DHSJ21N65Z Datasheet and Replacement
Type Designator: DHSJ21N65Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: PDFN4-8X8
DHSJ21N65Z substitution
DHSJ21N65Z Datasheet (PDF)
dhsj21n65z.pdf

DHSJ21N65Z16A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with the RoHSR = 150mDS(on) (TYP)standard.I = 16 AD2 Features Low on resistance Low gate charge Fast switching Low re
dhsj21n65w.pdf

DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP)Gthe RoHS standard. 1I = 21A 3 S D2 Features Fast switching Low on resistance
dhsj25n65f.pdf

DHSJ25N65F25A 650V N-channel Super Junction Power MOSFET1 DescriptionThis N-channel enhanced vdmosfets, is using advancedV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 110mDS(on) (TYP)RoHS standard.I = 25AD2 Features Fast switching Low on resistance Low gate charge Low reve
Datasheet: DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , DHSJ21N65W , IRF640N , DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 .
Keywords - DHSJ21N65Z MOSFET datasheet
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