FDD86252 Todos los transistores

 

FDD86252 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86252

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: TO252

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FDD86252 datasheet

 ..1. Size:343K  fairchild semi
fdd86252.pdf pdf_icon

FDD86252

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

 ..2. Size:568K  onsemi
fdd86252.pdf pdf_icon

FDD86252

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:374K  fairchild semi
fdd86250.pdf pdf_icon

FDD86252

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain

 7.2. Size:958K  onsemi
fdd86250 f085.pdf pdf_icon

FDD86252

www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench MOSFET 150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS Capability D RoHS Compliant Qualified to AEC Q101 D G Applications Automotive Engine Control S G D-PAK PowerTrain Management TO-252 (TO-252) Solenoid

Otros transistores... FDMQ8403, FQU5P20, FQU8P10, FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, IRF9540N, HUF75842P3, HUF75852G3, HUFA75307T3ST, HUFA75321D3S, HUFA75344S3, HUFA75639S3S, FDD86110, HUFA76407DK8TF085

 

 

 

 

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