All MOSFET. FDD86252 Datasheet

 

FDD86252 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD86252

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: TO252

FDD86252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDD86252 Datasheet (PDF)

1.1. fdd86252.pdf Size:343K _fairchild_semi

FDD86252
FDD86252

May 2013 FDD86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 27 A, 52 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A incorporates Shielded Gate technology. This process has been optimized for the on-state re

3.1. fdd86250.pdf Size:374K _fairchild_semi

FDD86252
FDD86252

December 2010 FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m? at VGS = 10 V, ID = 8 A Semiconductors advanced Power Trench process that has Max rDS(on) = 31 m? at VGS = 6 V, ID = 6.5 A been especially tailored to minimize the on-state resistance and yet maintain superior s

 5.1. fdd86369 f085.pdf Size:456K _upd-mosfet

FDD86252
FDD86252

May 2015 FDD86369_F085 N-Channel PowerTrench® MOSFET 80 V, 90 A, 7.9 mΩ Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A D Typical Qg(tot) = 34 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integ

5.2. fdd86367 f085.pdf Size:352K _upd-mosfet

FDD86252
FDD86252

May 2015 FDD86367_F085 N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ Features Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers For c

 5.3. fdd86326.pdf Size:216K _fairchild_semi

FDD86252
FDD86252

June 2010 FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m? Features Max rDS(on) = 23 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 37 m? at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild High performance trench technology for extremely low rDS(on) Semiconductors advanced Power Trench process that has been optimized for rDS(on), swit

5.4. fdd86113lz.pdf Size:239K _fairchild_semi

FDD86252
FDD86252

June 2013 FDD86113LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 5.5 A, 104 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A that incorporates Shielded Gate technology. This process has been optimi

 5.5. fdd86102.pdf Size:403K _fairchild_semi

FDD86252
FDD86252

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m? Features Max rDS(on) = 24 m? at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m? at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rDS(on), swi

5.6. fdd86540.pdf Size:241K _fairchild_semi

FDD86252
FDD86252

February 2012 FDD86540 N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

5.7. fdd86110.pdf Size:330K _fairchild_semi

FDD86252
FDD86252

December 2014 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A incorporates Shielded Gate technology. This process has been optimized for th

5.8. fdd86102lz.pdf Size:365K _fairchild_semi

FDD86252
FDD86252

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m? Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m? at VGS = 10 V, ID = 8 A Semiconductors advanced PowerTrench process that has Max rDS(on) = 31 m? at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching loss. G-S

5.9. fdd8647l.pdf Size:311K _fairchild_semi

FDD86252
FDD86252

December 2008 FDD8647L N-Channel PowerTrench MOSFET 40 V, 42 A, 9 m? Features General Description This N-Channel MOSFET has been produced using Fairchild Max rDS(on) = 9 m? at VGS = 10 V, ID = 13 A Semiconductors proprietary PowerTrench technology to Max rDS(on) = 13 m? at VGS = 4.5 V, ID = 11 A deliver low rDS(on) and optimized BVDSS capability to offer superior performance ben

Datasheet: FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , IRFZ48N , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8T_F085 .

 
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