May 2013FDD86252N-Channel Shielded Gate PowerTrench MOSFET 150 V, 27 A, 52 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 52 m at VGS = 10 V, ID = 5 Aincorporates Shielded Gate technology. This process has been optimized for the on-state re

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2010FDD86250N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22 m at VGS = 10 V, ID = 8 ASemiconductors advanced Power Trench process that has Max rDS(on) = 31 m at VGS = 6 V, ID = 6.5 Abeen especially tailored to minimize the on-state resistance and yet maintain

www.onsemi.comFDD86250_F085 (Note1)N-Channel Sheilded Gate PowerTrench MOSFET150 V, 50 A, 22 m Features Typical RDS(on) = 19.4 m at VGS = 10V, ID = 20 A Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A UIS CapabilityD RoHS Compliant Qualified to AEC Q101DGApplications Automotive Engine ControlSGD-PAK PowerTrain Management TO-252(TO-252) Solenoid

Isc N-Channel MOSFET Transistor FDD86250FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta