I740 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

I740 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: I740
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 124 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: TO262

Búsqueda de reemplazo de MOSFET I740

Principales características: I740

..1. Size:1411K cn wxdh
740 f740 i740 e740 b740 d740.pdf pdf_icon

740/F740/I740/ E740/B740/D740 10A 400V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 400V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the R = 0.44 DS(on)(TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 10A 3 S D 2 Featu

0.1. Size:220K 1
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0.2. Size:221K international rectifier
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0.3. Size:925K international rectifier
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PD - 94854 IRFI740GPbF Lead-Free 11/19/03 Document Number 91156 www.vishay.com 1 IRFI740GPbF Document Number 91156 www.vishay.com 2 IRFI740GPbF Document Number 91156 www.vishay.com 3 IRFI740GPbF Document Number 91156 www.vishay.com 4 IRFI740GPbF Document Number 91156 www.vishay.com 5 IRFI740GPbF Document Number 91156 www.vishay.com 6 IRFI740GPbF TO-220 Full

0.4. Size:679K fairchild semi
irfw740b irfi740b.pdf pdf_icon

November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

0.5. Size:486K vishay
si7409adn.pdf pdf_icon

Si7409ADN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET - 30 25 0.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

0.6. Size:564K vishay
si7405bdn.pdf pdf_icon

New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.013 at VGS = - 4.5 V - 16a RoHS 0.017 at VGS = - 2.5 V - 12 - 16a 46 nC COMPLIANT APPLICATIONS 0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

0.7. Size:1583K vishay
irfi740g sihfi740g.pdf pdf_icon

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin

0.8. Size:1296K vishay
irfi740glc sihfi740glc.pdf pdf_icon

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

0.9. Size:92K vishay
si7405dn.pdf pdf_icon

Si7405DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8-V Rated VDS (V) rDS(on) ( )ID (A) Pb-free New PowerPAK Package Available 0.016 at VGS = 4.5 V 13 Low Thermal Resistance, RthJC RoHS* Low 1.07-mm Profile 0.022 at VGS = 2.5 V 11 12 COMPLIANT 0.028 at VGS = 1.8 V 9.8 APPL

0.10. Size:534K vishay
si7407dn.pdf pdf_icon

Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Available TrenchFET Power MOSFETS 1.8 V Rated 0.012 at VGS = - 4.5 V - 15.6 RoHS* New Low Thermal Resistance PowerPAK COMPLIANT 0.016 at VGS = - 2.5 V - 12 - 13.5 Package with Low 1.07 mm Profile Ultra-Low RDS(on) 0.

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Si7402DN Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0057 at VGS = 4.5 V 20 TrenchFET Power MOSFET 0.0067 at VGS = 2.5 V 12 18.8 New Low Thermal Resistance PowerPAK 0.0085 at VGS = 1.8 V 16.5 Package with Low 1.07 mm Profile Compliant to RoHS D

0.12. Size:539K vishay
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Si7403BDN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.074 at VGS = - 4.5 V - 8c TrenchFET Power MOSFET 2.5 V Rated - 20 5.6 nC 0.110 at VGS = - 2.5 V - 7.4 PowerPAK Package - Low Thermal Resistance - Low 1.07 mm Profile APPLICATIONS PowerPAK

0.13. Size:572K vishay
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Si7401DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8-V Rated VDS (V) rDS(on) ( )ID (A) Pb-free New PowerPAK Package Available 0.021 at VGS = 4.5 V 11 Low Thermal Resistance, RthJC RoHS* Low 1.07-mm Profile 0.028 at VGS = 2.5 V 9.8 20 COMPLIANT 0.034 at VGS = 1.8 V 8.9 APPL

0.15. Size:554K vishay
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Si7404DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.013 at VGS = 10 V 13.3 TrenchFET Power MOSFET 0.015 at VGS = 4.5 V 30 12.4 Compliant to RoHS Directive 2002/95/EC 0.022 at VGS = 2.5 V 10.2 APPLICATIONS PowerPAK 1212-8 Li-lon

0.16. Size:1297K vishay
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0.17. Size:1600K vishay
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IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Singl

0.18. Size:47K vishay
si7403dn.pdf pdf_icon

Si7403DN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFETS 2.5-V Rated VDS (V) rDS(on) (W) ID (A) D New PowerPAKt Package 0.1 @ VGS = 4.5 V 4.5 Low Thermal Resistance, RthJC 20 Low 1.07-mm Profile 0.135 @ VGS = 2.5 V 3.8 APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 S 3.3

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bri740.pdf pdf_icon

BRI740 Rev.A Sep.-2023 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices are well su

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