I740 - описание и поиск аналогов

740/F740/I740/ E740/B740/D740 10A 400V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 400V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the R = 0.44 DS(on)(TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 10A 3 S D 2 Featu

PD - 94854 IRFI740GPbF Lead-Free 11/19/03 Document Number 91156 www.vishay.com 1 IRFI740GPbF Document Number 91156 www.vishay.com 2 IRFI740GPbF Document Number 91156 www.vishay.com 3 IRFI740GPbF Document Number 91156 www.vishay.com 4 IRFI740GPbF Document Number 91156 www.vishay.com 5 IRFI740GPbF Document Number 91156 www.vishay.com 6 IRFI740GPbF TO-220 Full

November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tailored to

Si7409ADN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET - 30 25 0.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.013 at VGS = - 4.5 V - 16a RoHS 0.017 at VGS = - 2.5 V - 12 - 16a 46 nC COMPLIANT APPLICATIONS 0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Sin

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

Si7405DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8-V Rated VDS (V) rDS(on) ( )ID (A) Pb-free New PowerPAK Package Available 0.016 at VGS = 4.5 V 13 Low Thermal Resistance, RthJC RoHS* Low 1.07-mm Profile 0.022 at VGS = 2.5 V 11 12 COMPLIANT 0.028 at VGS = 1.8 V 9.8 APPL

Si7407DN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Available TrenchFET Power MOSFETS 1.8 V Rated 0.012 at VGS = - 4.5 V - 15.6 RoHS* New Low Thermal Resistance PowerPAK COMPLIANT 0.016 at VGS = - 2.5 V - 12 - 13.5 Package with Low 1.07 mm Profile Ultra-Low RDS(on) 0.

Si7402DN Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0057 at VGS = 4.5 V 20 TrenchFET Power MOSFET 0.0067 at VGS = 2.5 V 12 18.8 New Low Thermal Resistance PowerPAK 0.0085 at VGS = 1.8 V 16.5 Package with Low 1.07 mm Profile Compliant to RoHS D

Si7403BDN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.074 at VGS = - 4.5 V - 8c TrenchFET Power MOSFET 2.5 V Rated - 20 5.6 nC 0.110 at VGS = - 2.5 V - 7.4 PowerPAK Package - Low Thermal Resistance - Low 1.07 mm Profile APPLICATIONS PowerPAK

New Product Si7405BDN Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.013 at VGS = - 4.5 V - 16a RoHS 0.017 at VGS = - 2.5 V - 12 - 16a 46 nC COMPLIANT APPLICATIONS 0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

Si7401DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8-V Rated VDS (V) rDS(on) ( )ID (A) Pb-free New PowerPAK Package Available 0.021 at VGS = 4.5 V 11 Low Thermal Resistance, RthJC RoHS* Low 1.07-mm Profile 0.028 at VGS = 2.5 V 9.8 20 COMPLIANT 0.034 at VGS = 1.8 V 8.9 APPL

Si7404DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.013 at VGS = 10 V 13.3 TrenchFET Power MOSFET 0.015 at VGS = 4.5 V 30 12.4 Compliant to RoHS Directive 2002/95/EC 0.022 at VGS = 2.5 V 10.2 APPLICATIONS PowerPAK 1212-8 Li-lon

IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* Isolated Package Qg (Max.) (nC) 39 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 10 f = 60 Hz) Qgd (nC) 19 Sink to Lead C

IRFI740G, SiHFI740G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 400 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.55 f = 60 Hz) RoHS* Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 33 Low Thermal Resistance Configuration Singl

Si7403DN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFETS 2.5-V Rated VDS (V) rDS(on) (W) ID (A) D New PowerPAKt Package 0.1 @ VGS = 4.5 V 4.5 Low Thermal Resistance, RthJC 20 Low 1.07-mm Profile 0.135 @ VGS = 2.5 V 3.8 APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 S 3.3

BRI740 Rev.A Sep.-2023 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices are well su