I740 Datasheet and Replacement

740/F740/I740/E740/B740/D74010A 400V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 400VDSSself-aligned planar technology which reduce the conductionloss, improve switching performance and enhance theR = 0.44DS(on)(TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 10A3 S D2 Featu

PD - 94854IRFI740GPbF Lead-Free11/19/03Document Number: 91156 www.vishay.com1IRFI740GPbFDocument Number: 91156 www.vishay.com2IRFI740GPbFDocument Number: 91156 www.vishay.com3IRFI740GPbFDocument Number: 91156 www.vishay.com4IRFI740GPbFDocument Number: 91156 www.vishay.com5IRFI740GPbFDocument Number: 91156 www.vishay.com6IRFI740GPbFTO-220 Full

November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

Si7409ADNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.019 at VGS = - 4.5 V - 11 TrenchFET Power MOSFET- 30 250.031 at VGS = - 2.5 V - 8.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile VDS Optimized for Load Switch

New ProductSi7405BDNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.013 at VGS = - 4.5 V - 16aRoHS0.017 at VGS = - 2.5 V - 12- 16a 46 nCCOMPLIANTAPPLICATIONS0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

Si7405DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.016 at VGS = 4.5 V 13 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.022 at VGS = 2.5 V 11 12COMPLIANT0.028 at VGS = 1.8 V 9.8APPL

Si7407DNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFETS: 1.8 V Rated0.012 at VGS = - 4.5 V - 15.6RoHS* New Low Thermal Resistance PowerPAKCOMPLIANT0.016 at VGS = - 2.5 V - 12 - 13.5 Package with Low 1.07 mm Profile Ultra-Low RDS(on)0.

Si7402DNVishay SiliconixN-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0057 at VGS = 4.5 V 20 TrenchFET Power MOSFET0.0067 at VGS = 2.5 V 12 18.8 New Low Thermal Resistance PowerPAK0.0085 at VGS = 1.8 V 16.5Package with Low 1.07 mm Profile Compliant to RoHS D

Si7403BDNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.074 at VGS = - 4.5 V - 8c TrenchFET Power MOSFET: 2.5 V Rated- 20 5.6 nC0.110 at VGS = - 2.5 V - 7.4 PowerPAK Package- Low Thermal Resistance- Low 1.07 mm ProfileAPPLICATIONSPowerPAK

New ProductSi7405BDNVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.013 at VGS = - 4.5 V - 16aRoHS0.017 at VGS = - 2.5 V - 12- 16a 46 nCCOMPLIANTAPPLICATIONS0.024 at VGS = - 1.8 V - 16a Load Switch, PA Switch and Power Switch for Portab

Si7401DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8-V RatedVDS (V) rDS(on) ()ID (A)Pb-free New PowerPAK PackageAvailable0.021 at VGS = 4.5 V 11 Low Thermal Resistance, RthJCRoHS* Low 1.07-mm Profile0.028 at VGS = 2.5 V 9.820COMPLIANT0.034 at VGS = 1.8 V 8.9APPL

Si7404DNVishay SiliconixN-Channel 30 V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.013 at VGS = 10 V 13.3 TrenchFET Power MOSFET0.015 at VGS = 4.5 V 30 12.4 Compliant to RoHS Directive 2002/95/EC0.022 at VGS = 2.5 V 10.2APPLICATIONSPowerPAK 1212-8 Li-lon

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

IRFI740G, SiHFI740GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.55f = 60 Hz) RoHS*Qg (Max.) (nC) 66 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Singl

Si7403DNNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY FEATURESD TrenchFETr Power MOSFETS: 2.5-V RatedVDS (V) rDS(on) (W) ID (A)D New PowerPAKt Package0.1 @ VGS = 4.5 V4.5 Low Thermal Resistance, RthJC20 Low 1.07-mm Profile0.135 @ VGS = 2.5 V 3.8APPLICATIONSD Load SwitchingD PA SwitchingS S SPowerPAKt 1212-8S3.3

BRI740 Rev.A Sep.-2023 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices are well su