HUFA75307T3ST Todos los transistores

 

HUFA75307T3ST MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUFA75307T3ST

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SOT223

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HUFA75307T3ST datasheet

 ..1. Size:174K  fairchild semi
 hufa75307t3st.pdf pdf_icon

HUFA75307T3ST

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

 ..2. Size:289K  onsemi
 hufa75307t3st.pdf pdf_icon

HUFA75307T3ST

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:215K  fairchild semi
 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf pdf_icon

HUFA75307T3ST

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 6.1. Size:171K  fairchild semi
 hufa75309t3st.pdf pdf_icon

HUFA75307T3ST

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

MOSTRAR MÁS

Otros transistores... FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252, HUF75842P3, HUF75852G3, AO3401, HUFA75321D3S, HUFA75344S3, HUFA75639S3S, FDD86110, HUFA76407DK8TF085, HUFA76409D3ST, HUFA76413DK8TF085, HUFA76419D3S

 

 

 

 

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