HUFA75307T3ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HUFA75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUFA75307P3, HUFA75307D3, HUFA75307D3SData Sheet December 200115A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 15A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

HUFA75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

HUFA75309P3, HUFA75309D3, HUFA75309D3SData Sheet December 200119A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 19A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models