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HUFA75307T3ST MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HUFA75307T3ST
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для HUFA75307T3ST

 

 

HUFA75307T3ST Datasheet (PDF)

 ..1. Size:174K  fairchild semi
 hufa75307t3st.pdf

HUFA75307T3ST HUFA75307T3ST

HUFA75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

 ..2. Size:289K  onsemi
 hufa75307t3st.pdf

HUFA75307T3ST HUFA75307T3ST

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:215K  fairchild semi
 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf

HUFA75307T3ST HUFA75307T3ST

HUFA75307P3, HUFA75307D3, HUFA75307D3SData Sheet December 200115A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 15A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

 6.1. Size:171K  fairchild semi
 hufa75309t3st.pdf

HUFA75307T3ST HUFA75307T3ST

HUFA75309T3STData Sheet December 20013A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFET 3A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

 6.2. Size:215K  fairchild semi
 hufa75309d3 hufa75309d3s hufa75309p3.pdf

HUFA75307T3ST HUFA75307T3ST

HUFA75309P3, HUFA75309D3, HUFA75309D3SData Sheet December 200119A, 55V, 0.070 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 19A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models

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