HUFA75307T3ST MOSFET Datasheet: N-Ch, 55V, 2.6A. Full specification with pinout and replacement list

HUFA75307T3ST Specs and Replacement

Type Designator: HUFA75307T3ST

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT223

HUFA75307T3ST substitution

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HUFA75307T3ST datasheet

..1. Size:174K fairchild semi
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HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC... See More ⇒

..2. Size:289K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

5.1. Size:215K fairchild semi
hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf pdf_icon

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models... See More ⇒

6.1. Size:171K fairchild semi
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HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE ... See More ⇒