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HUFA76419D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUFA76419D3S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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HUFA76419D3S Datasheet (PDF)

 ..1. Size:194K  fairchild semi
 hufa76419d3s.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 3.1. Size:197K  fairchild semi
 hufa76419d3-s hufa76419d f085.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 3.2. Size:196K  fairchild semi
 hufa76419d3.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 5.1. Size:213K  fairchild semi
 hufa76419p3 hufa76419s3s hufa76419s3st.pdf pdf_icon

HUFA76419D3S

HUFA76419P3, HUFA76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

MOSTRAR MÁS

Otros transistores... HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8TF085 , HUFA76409D3ST , HUFA76413DK8TF085 , RFP50N06 , HUFA76429D3 , HUFA76429D3STF085 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N .

History: RFD14N05SM9A | AP18P10GM

 

 
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