All MOSFET. HUFA76419D3S Datasheet

 

HUFA76419D3S Datasheet and Replacement


   Type Designator: HUFA76419D3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO252 DPAK
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HUFA76419D3S Datasheet (PDF)

 ..1. Size:194K  fairchild semi
 hufa76419d3s.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 3.1. Size:197K  fairchild semi
 hufa76419d3-s hufa76419d f085.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 3.2. Size:196K  fairchild semi
 hufa76419d3.pdf pdf_icon

HUFA76419D3S

HUFA76419D3, HUFA76419D3SData Sheet December 200120A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.037, VGS = 10VDRAINDRAIN- rDS(ON) = 0.043, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

 5.1. Size:213K  fairchild semi
 hufa76419p3 hufa76419s3s hufa76419s3st.pdf pdf_icon

HUFA76419D3S

HUFA76419P3, HUFA76419S3SData Sheet December 200127A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.040, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

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History: LSF65R570GT | CSD16342Q5A

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